Preparation of Cu2-xS Nanotubes and Their Surface Photovoltaic Properties
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摘要: 为了研究CuS纳米材料在光电领域中的应用,采用水热法合成Cu2-xS纳米管,用X射线衍射仪、扫描电 镜表征产物的结构和形貌.在25曟下测试了Cu2-xS纳米管的光吸收性能,利用紫外可见吸收光谱、表面光电压 谱和场诱导表面光电压谱,研究其表面光电性质及光伏响应随电场变化的规律.结果表明:合成的Cu2-xS纳米管 外径为325~675nm,管壁厚为70~125nm,长度为10~20毺m;在300~800nm紫外可见光谱范围内,存在两 个吸收区域,场诱导表面光电压谱表明所制备的样品为n-型半导体.Abstract: In order to explore the photoelectric applications of CuS materials, copper sulfide (Cu2-xS) nanotubes were prepared via hydrothermal method. The structure and morphology of the Cu2-xS were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The surface optoelectronic properties of the products and their photovoltaic properties in varying electric field were investigated by UV-vis spectrophotometer, surface photovoltage spectrum (SPS), and field-induced surface photovoltage spectroscopy (FISPS). The results show that the outer diameter, thickness, and length of the nanotubes are 325—675 nm, 70—125 nm, and 10—20 μm, respectively. There are two absorption areas in the wavelength range of 300—800 nm according to the UV-vis spectrum. The FISPS shows that the copper sulfide (Cu2-xS) nanotubes are n-type semiconductor.
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