半导体非对称阶梯量子阱结构的
二阶非线性极化率

半导体非对称阶梯量子阱结构的二阶非线性极化率

摘要: 为优化二次谐波产生器件的性能,研究和开发新的非线性光学材料,对半导体非对称阶梯量子阱结构的性质进行了研究。计算了共振增强效应下的二阶非线性光学系数χ(2)2ω,给出了χ(2)2ω随阱宽、阶梯的高度和宽度、势垒宽度、入射波长等因素变化的规律。
- 非线性光学 /
- 半导体物理 /
- 阶梯势阱 /
- 二阶非线性极化率
Abstract: The characters of asymmetrical step wells are studied. The resonantly enhanced second- order susceptibilityχ(2)2ωis calculated, and the changes ofχ(2)2ωwith the width of the wells, the width and height of the step, the barrier width and the wave length of incident light are given. The obtained results provide a certain basis for optimizing the properties of second-harmonic producer, and developing new nonlinear optical materials.
- nonlinear optics /
- semiconductor physics /
- step well /
- second-order nonlinear susceptibility

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