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BERGER L I,Semiconductor materials[M].New York:CRC Press,1997:429-435.[2] HEON H,SHEN G Z,CHO J H,et al.Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties[J].Chemical Physics Letters,2005,404 (1-3):69-73.[3] POWER M J,BENJAMIN M C,PORTER L M,et al.Observtion of a negative electron affinity for boron nitride[J].Appl.Phys.Lett.,1995,67(26):3 912-3 914.[4] WANG R Z,WANG B,～rANG H,Band bending mechanim for field emission in wide band gap semiconductors[J].Appl.Phys.Lett.,2002,81(15):2 782-2 784.[5] LEE C J,LEE T J,LYU S C,et al.Field emission from well-allgned zinc oxide nanowires grown at low temperature[J].Appl.Phys.Lett.,2002,81(19):3 648-3 650.[6] WANG Q,YU K,WANG T H,et al.Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation[J].Appl.Phys.Lett.,2003,83(11):2 253-2 255.[7] ZHAO Q,XU X Y,SONG X Y,et al.Enhanced field emission from ZnO nanorods via thermal annealing in oxygen[J].Appl.Phys.Lett.,2006,88('3):033 102-033 104.[8] NIRANJAN S,RAMGIR,IMTIAZ S,et al.Uhralow threshold field emission from a single muhipod structrure of ZnO[J].Appl.Phys.Lett.,2006,88(4):042 107-042 109.[9] ZhOU Z W,CHU L S.Studies on the antistatic mechanism of tetrapod shaped zinc oxide whisker[J] J.Electrostatics,2003,57 (1-3):347-354.[10] XU C X,SUN X W,CHEN B J.Field emission from gallium-doped zinc oxide nanofiber array[J].Appl.Phys.Lett.,2004,84 (9):1 540-1 542.[11] LIU Y D,LIAN J S.Optical and electrical properties of aluminum-doped ZnO thin films grown by pulsed laser deposition[J].Applied Surface Science,2007,253(7):3 727-3 730.[12] LIN B X,FU Z X,JIA Y B.Green luminescent center in undoped zinc oxide films deposited on silicon substrates[J].Appl.Phys.Lett.,2001,79 (27):943-945.
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