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Ce掺杂的WO3薄膜的电学性质

董亮 王豫 李德柱 李统业 严仲明

董亮, 王豫, 李德柱, 李统业, 严仲明. Ce掺杂的WO3薄膜的电学性质[J]. 西南交通大学学报, 2009, 22(6): 963-967.
引用本文: 董亮, 王豫, 李德柱, 李统业, 严仲明. Ce掺杂的WO3薄膜的电学性质[J]. 西南交通大学学报, 2009, 22(6): 963-967.
DONG Liang, WANG Yu, LI Dezhu, LI Tongye, YAN Zhongming. Electrical Properties of Ce-Doped WO3 Thin Film[J]. Journal of Southwest Jiaotong University, 2009, 22(6): 963-967.
Citation: DONG Liang, WANG Yu, LI Dezhu, LI Tongye, YAN Zhongming. Electrical Properties of Ce-Doped WO3 Thin Film[J]. Journal of Southwest Jiaotong University, 2009, 22(6): 963-967.

Ce掺杂的WO3薄膜的电学性质

基金项目: 

国家自然科学基金资助项目(50772092)

西南交通大学青年教师科学研究起步基金资助项目(2008Q006)

详细信息
    作者简介:

    董亮(1979- ),男,助理研究员,博士研究生,研究方向为无机功能材料,电话:028-86467315,E-mail:ldong@home.swjtu.edu.cn

    通讯作者:

    王豫(1960- ),男,教授,博士,研究方向为超导电工应用及无机功能材料电学性能,E-mail:wangyu@home.swjtu.edu.cn

Electrical Properties of Ce-Doped WO3 Thin Film

  • 摘要: 在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO3薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.

     

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出版历程
  • 收稿日期:  2009-02-23
  • 刊出日期:  2010-01-20

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