Electrical Properties of Ce-Doped WO3 Thin Film
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摘要: 在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO3薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.Abstract: Ce-doped WO3 thin films were fabricated by DC reactive magnetron sputtering on glass substrates and annealed in dry air at 550℃ for 1 h.The effects of sputtering power on electrical properties of the film were investigated.X-ray diffraction(XRD) and scanning electron microscopy(SEM) analyses were performed to characterize the film.The experimental results show that Ce-doping caused WO3 crystals to grow along the preferred orientation(b-axis) with island structures,and the film displayed the highest nonlinear coefficient of 7.92 when the sputtering powers for Ce and W were 40 W and 160 W,respectively.
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Key words:
- Ce-doping /
- WO3 thin film /
- magnetron sputtering /
- microstructure /
- electrical property
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GRANQVIST C G.Electrochromic tungsten oxide films:Review of progress 1993 ~ 1998[J].Solar Energy Mater Solar Cells,2000,60(3):201-262.[2] PENZA M,TAGLIENTE M A,MIRENGHI L,et al.Tungsten trioxide (WO3) sputtered thin films for a NOx,gas sensor[J].Sensors and Actrators B:Chemical,1998,50 (1):9-18.[3] WANG Huiyao,XU Pei,WANG Tianmin.The preparation and properties study of photocatalytic nanocrystalline/nanoporous WO3 thin films[J].Materials and Design,2002,23(3):331-336.[4] MAKAROV V O,TRONTELJ M.Novel varistor material baaed on tungsten oxide[J].J.Mater.Sci.Lett.,1994,13(5):937-939.[5] WANG Y,YAO K L,LIU Z L.Novel nonlinear current-voltage characteristics of sintered tungsten oxide[J].J.Mater.Sci.Lett.,2001,20(18):1741-1743.[6] WANG Y,ABURAS Z,YAO K L,LIU Z L.Effects of doping and temperature on nonlinearity of WO3 varistor[J].Mater Chemistry and Physics,1999,58(1):51-54.[7] MAKAROV V O,TRONTELJ M.Sintering and Electrical Conductivity of Doped WO3[J].J.Eur.Cera.Soc.,1996,16(7):791-794.[8] 叶长江,袁永,黎碧莲.电弧离子镀纳米TiO2光催化薄膜[J].真空,2005,42(1):22-24.YE Changjiang,YUAN Yong,LI Bilian,Photocatalytic activity of nanometer TiO2 thin film by arc ion plating[J].Vacuum,2005,42 (1):22-24.[9] 曾晓蓝,冷永祥,黄楠.磁控反应溅射制备Ta-N 薄膜的显微组织与畸变分析[J].西南交通大学学报,1998,33(3):263-268.ZENG Xiaolan,LENTG Yongxiang,HUANG Nan,Microstrueture and microdistortion of Ta-N films prepared by reactive magnetron sputtering[J].Journal of Southwest Jiao tong university,1998,33(3):263-268.[10] ITOH T,LEE C,SUGA T.Deflection detection and feedback actuation using a self-excited piezoelectric Pb(Zr,Ti)O3 microcantilever for dynamic scanning force microscopy[J].Appl.Phys.Lett.,1996,68 (14):2036-2038.[11] MAHAN G D,LEVINSON M,LIONEL M,et al.Theory of conduction in ZnO varistors[J].J.Appl.Phys.,1979,50(4):2799-2812.[12] GUPTA T K.Application of zinc oxide varistors[J].J.Am.Ceram.Soc.,1990,73(7):1817-1823.[13] PIANARO S A,BUENO P R,OLIVIP.Effect of Bi2O3 addition of the microstructure and electrical properties of the SnO2-CoO-Nb2O5 varistor system[J].J.Mater.Sci.Lett.,1997,16(8):634-638.[14] PHILIPPL H P,LEVINSON M.High-temperature behavior of ZnO-based ceramic varistors[J].J.Appl.Phys.,1978,50(1):383-389.[15] PIANRO S A.Effect of Bi2O3 addition on the microstructure and electrical paroperties of the SnO2-CoO-Nb2O5 varistor system[J].J.Mater.Sci.Lett.,1997,16(8):634-638.[16] 王豫,陈敏,羊新胜,等.磁控溅射法制备WO3薄膜及其非线性电学性质[J].功能材料与器件学报,2003,9(1):31-33.WANG Yu,CHEN Min,YANG Xinsheng,et al.Nolinear electrical property of WO3 thin film fabricated by RF sputtering technique[J].Journal of Functional Materials and Devices,2003,9(1):31-33.[17] 王豫,安承武,戴星,等.脉冲激光制备ZnO压敏电阻薄膜[J].压电与声光,1996,18(5):358-361.WANG Yu,AU Chenwu,DAI Xing,et al.ZnO piezoresistive thin film fabricated by pulsed laser[J].Piezo Electeics and Acoustooptics,1996,18(5):358-261.
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