Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model
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摘要: 以硅平面工艺生产设备为基础,设计制作了基于外延衬底的IGBT器件,器件的实测输出电流-电压特性良好,阈值电压在3.7~4.8 V之间.将制作IGBT器件的结构和工艺参数代入PIN二极管模型计算其正向导通压降,并将计算结果与器件的实测参数进行了比较.结果表明:小电流区段符合较好;但大电流区段由于模型简化和测试系统寄生串联电阻的影响出现偏差,对于同一导通电流,计算值比实测值约小8%.Abstract: IGBT (insulate gate bipolar transistor) devices with planar processes were designed and fabricated based on planar silicon CMOS (complimentary metal oxide semiconductor)technology equipments and epitaxial silicon substrates.The measured output current-voltage characteristics of the fabricated IGBT devices are excellent,and their threshold voltage is from 3.7 to 4.8 V.The forward voltage drops of the IGBT devices were analyzed and calculated by PIN diode (a p-type near intrinsic and an n-type semiconductor) model with their designed structure and process parameters,and the calculated forward voltage drops were compared with the measured data.The comparison result shows that they are fitting better when conducted currents are small,but there exist differences between the calculated and measured forward voltage drops due to model simplification and parasitic series resistors in the test systems when conducted currents are large and the calculated forward voltage drops are about 8% smaller than the measured values under the same drain-source conducted currents.
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Key words:
- IGBT(insulate gate bipolar transistor) /
- design /
- technology /
- PIN model /
- fabrication
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