Thermal Shutdown Circuit with Low Voltage and Low Power Consumption for Power Management IC
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摘要: 利用晶体管PN结的导通电压随温度升高而降低,而其变化值随温度的升高而增加的特性,设计了集成于电源管理芯片内部的温度传感器,实现了过热保护,并通过反馈延迟重新接通电源,避免了在过热温度点的热振荡.采用0.6μm BiCMOS工艺参数,对电路进行模拟仿真.结果表明,该电路的功耗低(静态电流约0.5μA);在电源电压为2.5~5.0 V,关断温度设置为150℃时,关断温度误差±1.00℃;重新接通电源的迟滞温度设置为135℃时,实际接通电源时的温度误差±0.01℃.
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关键词:
- 过热保护 /
- 温度传感器 /
- 电源管理芯片 /
- BiCMOS集成电路 /
- PN结
Abstract: A thermal shutdown circuit with low voltage and low power consumption was designed for power management ICs(integrated circuits).In the thermal shutdown circuit,the PN junction of a transistor was used as a temperature probe,where the switch-on voltage rises,and the variation of the switch-on voltage falls,with an increase in temperature.Reswitch-on temperature was depressed by a feedback mechanism to avoid temperature oscillation.Simulation with the parameters for a 0.6 μm BiCMOS IC was conducted.The results show that the circuit has ultra-low power consumption(the static current is about 0.5 μA);the errors of shutdown temperature are less than 1.00℃ when the shutdown temperature is set at 150℃ and the voltage of power source is 2.5 to 5.0 V;and the errors of reswitch-on temperature are less than 0.01℃ when the reswitch-on temperature is set at 135℃.-
Key words:
- thermal shutdown /
- temperature sensor /
- power management IC /
- BiCMOS IC /
- PN junction
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