• ISSN 0258-2724
  • CN 51-1277/U
  • EI Compendex
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  • Indexed by Core Journals of China, Chinese S&T Journal Citation Reports
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Volume 21 Issue 6
Dec.  2008
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Article Contents
FAN Ximei, ZHOU Zuowan, LI Yanxia, ZHANG Huiguang. Field Emission and Photoluminescence Properties of Al-Doped T-ZnO Whiskers[J]. Journal of Southwest Jiaotong University, 2008, 21(6): 806-809,815.
Citation: FAN Ximei, ZHOU Zuowan, LI Yanxia, ZHANG Huiguang. Field Emission and Photoluminescence Properties of Al-Doped T-ZnO Whiskers[J]. Journal of Southwest Jiaotong University, 2008, 21(6): 806-809,815.

Field Emission and Photoluminescence Properties of Al-Doped T-ZnO Whiskers

  • Received Date: 19 Dec 2007
  • Publish Date: 25 Dec 2008
  • Al-doped tetrapod-like ZnO(T-ZnO) films were fabricated using screen printing method to study their structures,surface morphologies,optical properties and field emission behaviors.All samples show typical photo luminescence(PL) behaviors with two emissions of a narrow UV peak centering around 373 to 383 nm and a green deep level peak centering around 510 to 540 nm.The green deep level PL emission is attributed to the defects in the T-ZnO films.The largest UV peak and the highest field emission were observed on 0.5 mol/L Al-doped T-ZnO films.The turn-on field and the threshold field of the T-ZnO films were 3.6 V/μm and 6.9 V/μm,respectively,and the enhance field factor was 30 249.

     

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