• ISSN 0258-2724
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Volume 21 Issue 1
Feb.  2009
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Article Contents
ZHANG Xueqin, WU Guangning, LI Xiaohua, BIAN Shanshan. Effects of Typical Defects on Electrical Fields in High-Voltage (Storage) Capacitors[J]. Journal of Southwest Jiaotong University, 2008, 21(1): 14-18.
Citation: ZHANG Xueqin, WU Guangning, LI Xiaohua, BIAN Shanshan. Effects of Typical Defects on Electrical Fields in High-Voltage (Storage) Capacitors[J]. Journal of Southwest Jiaotong University, 2008, 21(1): 14-18.

Effects of Typical Defects on Electrical Fields in High-Voltage (Storage) Capacitors

  • Received Date: 24 Oct 2006
  • Publish Date: 25 Feb 2008
  • Four typical defects,that is,inner,contact,overlap and oil defects,were modeled based on the insulation structure and its working environment in high-voltage storage capacitors.Two dimensional axisymmetric electrical fields were analyzed with finite element method.The results show that the electrical field around an inner defect may be higher than the rated value of the dielectric,and distorts more significantly with a greater space charge density under reverse pulse voltages;contact defects(burrs and oxidized spots) cause electrical concentration;the electric field on the corner at an overlap defect is higher than the rated value of the dielectric;and oil defect does not cause high electrical field and basically unaffected by space charges.

     

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