• ISSN 0258-2724
  • CN 51-1277/U
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Volume 22 Issue 6
Mar.  2010
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Article Contents
DONG Liang, WANG Yu, LI Dezhu, LI Tongye, YAN Zhongming. Electrical Properties of Ce-Doped WO3 Thin Film[J]. Journal of Southwest Jiaotong University, 2009, 22(6): 963-967.
Citation: DONG Liang, WANG Yu, LI Dezhu, LI Tongye, YAN Zhongming. Electrical Properties of Ce-Doped WO3 Thin Film[J]. Journal of Southwest Jiaotong University, 2009, 22(6): 963-967.

Electrical Properties of Ce-Doped WO3 Thin Film

  • Received Date: 23 Feb 2009
  • Publish Date: 20 Jan 2010
  • Ce-doped WO3 thin films were fabricated by DC reactive magnetron sputtering on glass substrates and annealed in dry air at 550℃ for 1 h.The effects of sputtering power on electrical properties of the film were investigated.X-ray diffraction(XRD) and scanning electron microscopy(SEM) analyses were performed to characterize the film.The experimental results show that Ce-doping caused WO3 crystals to grow along the preferred orientation(b-axis) with island structures,and the film displayed the highest nonlinear coefficient of 7.92 when the sputtering powers for Ce and W were 40 W and 160 W,respectively.

     

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