• ISSN 0258-2724
  • CN 51-1277/U
  • EI Compendex
  • Scopus
  • Indexed by Core Journals of China, Chinese S&T Journal Citation Reports
  • Chinese S&T Journal Citation Reports
  • Chinese Science Citation Database
Volume 22 Issue 5
Mar.  2010
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Article Contents
YUAN Shoucai, LIU Yamei. Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model[J]. Journal of Southwest Jiaotong University, 2009, 22(5): 648-653.
Citation: YUAN Shoucai, LIU Yamei. Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model[J]. Journal of Southwest Jiaotong University, 2009, 22(5): 648-653.

Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model

  • Received Date: 29 Oct 2007
  • Publish Date: 12 Nov 2009
  • IGBT (insulate gate bipolar transistor) devices with planar processes were designed and fabricated based on planar silicon CMOS (complimentary metal oxide semiconductor)technology equipments and epitaxial silicon substrates.The measured output current-voltage characteristics of the fabricated IGBT devices are excellent,and their threshold voltage is from 3.7 to 4.8 V.The forward voltage drops of the IGBT devices were analyzed and calculated by PIN diode (a p-type near intrinsic and an n-type semiconductor) model with their designed structure and process parameters,and the calculated forward voltage drops were compared with the measured data.The comparison result shows that they are fitting better when conducted currents are small,but there exist differences between the calculated and measured forward voltage drops due to model simplification and parasitic series resistors in the test systems when conducted currents are large and the calculated forward voltage drops are about 8% smaller than the measured values under the same drain-source conducted currents.

     

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