• ISSN 0258-2724
  • CN 51-1277/U
  • EI Compendex
  • Scopus
  • Indexed by Core Journals of China, Chinese S&T Journal Citation Reports
  • Chinese S&T Journal Citation Reports
  • Chinese Science Citation Database
Volume 20 Issue 1
Feb.  2007
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Article Contents
XIAO Huaqing, XIONG Xiangzheng, LIAO Cheng. Influences of Planar Pattern on Performances of RFIC Spiral Inductors[J]. Journal of Southwest Jiaotong University, 2007, 20(1): 35-39.
Citation: XIAO Huaqing, XIONG Xiangzheng, LIAO Cheng. Influences of Planar Pattern on Performances of RFIC Spiral Inductors[J]. Journal of Southwest Jiaotong University, 2007, 20(1): 35-39.

Influences of Planar Pattern on Performances of RFIC Spiral Inductors

  • Received Date: 17 Jan 2006
  • Publish Date: 25 Feb 2007
  • The performances of RF(radio frequency) integrated circuit(RFIC) spiral inductors on silicon(SIOS) with different planar structures were simulated based on a typical physical model using the HFSS(high frequency structure simulator).The simulated results are well coincident with those from theoretical analysis.Compared with those of the quadrilateral and octagonal ones with the same inner radius,the maximum quality factor Q of the circular spiral inductor increases by 0.90 and 0.80 times,respectively;at the frequency corresponding to the maximum quality factor the reflection coefficient of the circular spiral inductor decreases by about 32.5% and 26.6%,respectively,and the masses of metals used decrease by about 30% and 20%,respectively;and the band width of the circular spiral inductor is about 60% and 30% wider,respectively,for Q5.

     

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  • ASHBY K B,KOULLIAS I A,FINLEY W C,et al.High-Q inductors for wireless application in a complementary silicon bipolar process[J].IEEE J.Solid-State Circuits,1996,31(1):4-9.[2] CHANG J Y,ABIDI A A,GAITAN M,et al.Large suspended inductors on silicon and their use in a 2μm CMOS RF amplifier[J].IEEE Electron Device Lett.,1993,14(5):246-248.[3] KIM B K,KO B K,LEE K,et al.Monolithic planar RF inductor and waveguide structure on silicon with performance comparable to those in GaAs MMIC[C]//International of Electron Devices Meeting.Washington:IEDM Press,1995:717-720.[4] 刘畅,陈学良,严金龙.新颖的衬底pn结隔离型硅射频集成电路[J].半导体学报,2001,22(12):1 486-1 489.LIU Chang,CHEN Xueliang,YAN Jinlong.Novel substrate pn junction isolation for RF integrated inductors on silicon[J].Chinese Journal of Semiconductors,2001,22(12):1 486-1 489.[5] BURGHARTZ J N,EDELSTEIN D C,JENKINS K A,et al.Monolithic spiral inductors fabricated using a VLSI Cudamascene interconnect technology and low-loss substrates[C]// International of Electron Devices Meeting.San Francisco:IEDM Press,1996:99-102.[6] BURGHARTZ J N,SOYUER M,JENKINS K A,et al.High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier[C]// International of Electron Devices Meeting.Washington:IEDM Press,1995.1 015-1 018.[7] YUE C P,RYU C,LAUJ,et al.A physical model for planar spiral inductors on silicon[C]//San Francisco:IEDM Press,1996:155-158.[8] YUE C P,WONG S S.On-chip spiral inductor with patterned ground shields for Si-based RFIC's[J].IEEE J.Solid-State Circuits,1998,33(5):743-752.[9] GREENHOUSE H M.Design of planar rectangular microelectronic inductors[J].IEEE Trans.Parts,Hybrids,and Packaging,1974,10(2):101-109.
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