• ISSN 0258-2724
  • CN 51-1277/U
  • EI Compendex
  • Scopus
  • Indexed by Core Journals of China, Chinese S&T Journal Citation Reports
  • Chinese S&T Journal Citation Reports
  • Chinese Science Citation Database
Volume 26 Issue 5
Oct.  2013
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Article Contents
ZHANG Xin, YANG Xinsheng, CHENG Cuihua, ZHANG Yong, LV Li, ZHANG Min, ZHAO Yong. Preparation of La0.7Sr0.3MnO3 Single-Crystal Epitaxial Films and Their Magnetoresistance Properties[J]. Journal of Southwest Jiaotong University, 2013, 26(5): 961-967. doi: 10.3969/j.issn.0258-2724.2013.05.028
Citation: ZHANG Xin, YANG Xinsheng, CHENG Cuihua, ZHANG Yong, LV Li, ZHANG Min, ZHAO Yong. Preparation of La0.7Sr0.3MnO3 Single-Crystal Epitaxial Films and Their Magnetoresistance Properties[J]. Journal of Southwest Jiaotong University, 2013, 26(5): 961-967. doi: 10.3969/j.issn.0258-2724.2013.05.028

Preparation of La0.7Sr0.3MnO3 Single-Crystal Epitaxial Films and Their Magnetoresistance Properties

doi: 10.3969/j.issn.0258-2724.2013.05.028
  • Received Date: 04 Jan 2012
  • Publish Date: 25 Oct 2013
  • In oder to obtain high quality single La0.7Sr0.3MnO3 (LSMO) buffer layers and study their low-field magnetoresistance (MR), a series of epitaxial films of perovskite manganites La0.7Sr0.3MnO3 (LSMO) deposited on the LaAlO3 (LAO) single crystal substrates were fabricated by the polymer-assisted chemical solution deposition method. Taking into account the influences of argon and oxygen annealing atmosphere on the LSMO phase formation, investigations were conducted on the surface morphology and texture of the specimens annealed in argon and the transport properties and colossal magnetoresistance (CMR) effect of the specimens annealed in oxygen. The results show that thick and high quality single LSMO buffer layers can be produced at low costs by the polymer-assisted chemical solution deposition method and annealing in argon atmosphere. The films fabricated in oxygen are found with good c-axis textured, and the MR measurements of the films shows a peak, corresponding to the insulator-metal (I-M) transition. The MR value does not change with the temperature between 200 to 300 K, and is about-26.0 % at room temperature in 1 T magnetic field.

     

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